Electronic structure of vacancies in Si(111) unreconstructed surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.6676/fulltext
Reference32 articles.
1. Structures of Clean Surfaces of Germanium and Silicon. I
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1. Local density of states of the Si(111) surface with vacancies and its reconstruction;Vacuum;1986-07
2. Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface;Czechoslovak Journal of Physics;1985-01
3. Electron correlation effects at vacancies in Si(111) unreconstructed surfaces;Physical Review B;1984-07-15
4. Electronic structure of line defects by means of the scattering theoretical method. Application to lines of vacancies in the simple cubic lattice;Physical Review B;1983-10-15
5. Electronic structure of the Si (111) reconstructed surface in the vacancy model;Surface Science;1982-04
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