Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.6724/fulltext
Reference12 articles.
1. Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures
2. Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
3. Prediction of a strain-induced conduction-band minimum in embedded quantum dots
4. Distortion of a Crystal by Point Imperfections
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