Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH) 2/VS2 heterobilayer-Reference-Cited by-同舟云学术

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Electrostatic gating dependent multiple-band alignments in a high-temperature ferromagnetic Mg(OH) 2/VS2 heterobilayer

Published:2017-06-09 Issue:24 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Xiong Wenqi,Xia Congxin,Du Juan,Wang Tianxing,Zhao Xu,Peng Yuting,Wei Zhongming,Li Jingbo

Funder

National Natural Science Foundation of China

Henan Normal University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.245408/fulltext

Reference49 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. The rise of graphene

3. The electronic properties of graphene

4. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

5. Single-layer MoS2 transistors

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