Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.4680/fulltext
Reference50 articles.
1. The solution of iron in silicon
2. Dotierungseigenschaften von Eisen in Silizium
3. Iron-related deep levels in silicon
4. Anisotropic broadening of linewidth in the EPR spectrum of Feo in silicon
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