Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag-Reference-Cited by-同舟云学术

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Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

Published:2018-06-08 Issue:6 Volume:2 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

He Yuping,Léonard François,Spataru Catalin D.

Funder

Defense Advanced Research Projects Agency

U.S. Department of Defense

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.2.065401/fulltext

Reference36 articles.

1. Thermoelectric Phenomena, Materials, and Applications

2. A model to analyze the device level performance of thermoelectric generator

3. Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C

4. Recent progress of half-Heusler for moderate temperature thermoelectric applications

5. Thermoelectric Modules Based on Half-Heusler Materials Produced in Large Quantities

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1. Improvement of the conversion efficiency of Mg3Sb2 thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer;Journal of Materials Science & Technology;2024-01

2. Elastic, anisotropic, lattice dynamics and electronic properties of XNiM and XNi2M (X = Ti, Zr, Hf; M = Sn, Ge, Si): DFT comparison study;Physica B: Condensed Matter;2023-09

3. Thermal-inert and ohmic-contact interface for high performance half-Heusler based thermoelectric generator;Nature Communications;2022-12-14

4. Manifestation of interface-induced effects of two-dimensional MSi2/Si(111) quantum heterostructures: A first principles study;Physica E: Low-dimensional Systems and Nanostructures;2022-08

5. Recent advances in designing thermoelectric materials;Journal of Materials Chemistry C;2022

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