Large Rashba spin splittings in bulk and monolayer of BiAs-Reference-Cited by-同舟云学术

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Large Rashba spin splittings in bulk and monolayer of BiAs

Published:2024-05-20 Issue:5 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Zubair Muhammad¹²^ORCID,Evangelista Igor²^ORCID,Khalid Shoaib³^ORCID,Medasani Bharat³^ORCID,Janotti Anderson²^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA

2. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA

3. Princeton Plasma Physics Laboratory, P.O. Box 451, Princeton, New Jersey 08543, USA

Funder

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.054604/fulltext

Reference51 articles.

1. Emergence of the persistent spin helix in semiconductor quantum wells

2. Direct mapping of the formation of a persistent spin helix

3. Spin Relaxation in GaAs(110) Quantum Wells

4. High Temperature Gate Control of Quantum Well Spin Memory

5. Spin Noise Spectroscopy in GaAs (110) Quantum Wells: Access to Intrinsic Spin Lifetimes and Equilibrium Electron Dynamics

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