Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders-Reference-Cited by-同舟云学术

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Published:2021-04-05 Issue:4 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Ariskina Regina^ORCID,Schnedler Michael^ORCID,Esquinazi Pablo D.^ORCID,Champi Ana^ORCID,Stiller Markus,Hergert Wolfram^ORCID,Dunin-Borkowski R. E.,Ebert Philipp,Venus Tom,Estrela-Lopis Irina

Funder

European Regional Development Fund

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.044601/fulltext

Reference81 articles.

1. Spontaneous inversion symmetry breaking in graphene bilayers

2. Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

3. High-resolution TEM observations of isolated rhombohedral crystallites in graphite blocks

4. Identification of a possible superconducting transition above room temperature in natural graphite crystals

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