InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers-Reference-Cited by-同舟云学术

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InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

Published:2016-11-28 Issue:5 Volume:6 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Taupin M.,Mannila E.,Krogstrup P.,Maisi V. F.,Nguyen H.,Albrecht S. M.,Nygård J.,Marcus C. M.,Pekola J. P.

Funder

Suomen Akatemia

Danmarks Grundforskningsfond

Microsoft Project Station Q

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.6.054017/fulltext

Reference44 articles.

1. Semiconductor nanowires for 0D and 1D physics and applications

2. Nanowire-based one-dimensional electronics

3. Functional Nanowires

4. Tunable Supercurrent Through Semiconductor Nanowires

5. InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunneling between parallel one-dimensional Wigner crystals;Scientific Reports;2022-03-16

2. Wigner Crystal Stability in Nanowires under a Longitudinal Electric Field;The Journal of Physical Chemistry C;2021-10-04

3. Self-Calibrating Superconducting Pair-Breaking Detector;Physical Review Letters;2021-09-30

4. A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices;Journal of Computational Electronics;2020-09-27

5. Coulomb blockade in monolithic and monocrystalline Al-Ge-Al nanowire heterostructures;Applied Physics Letters;2020-01-06

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