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Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure

  • Published:2016-12-30 Issue:6 Volume:6 Page:
  • ISSN:2331-7019
  • Container-title:Physical Review Applied
  • language:en
  • Short-container-title:Phys. Rev. Applied

Author:

Shen Jianxin,Shang Dashan,Chai Yisheng,Wang Yue,Cong Junzhuang,Shen Shipeng,Yan Liqin,Wang Wenhong,Sun Young

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

National Key Research Program of China

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

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2. Enhanced magnetic properties and magnetodielectric effects in Bi2Fe4O9/BaTiO3 composite;Journal of Alloys and Compounds;2022-11

3. The fourth fundamental circuit element: principle and applications;Journal of Physics D: Applied Physics;2022-02-24

4. Temperature response of non-hysteresis magnetic switching by electrical current;Journal of Materials Science: Materials in Electronics;2022-02-05

5. Charge-Driven Transtive Devices via Electric Field Control of Magnetism in a Helimagnet;Physical Review Applied;2021-11-24
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