Charge states and energy loss of300−MeV/uU73+ions channeled in a silicon crystal-Reference-Cited by-同舟云学术

Charge states and energy loss of300−MeV/uU73+ions channeled in a silicon crystal

Published:1999-04-01 Issue:4 Volume:59 Page:2813-2826
ISSN:1050-2947
Container-title:Physical Review A
language:en
Short-container-title:Phys. Rev. A

Author:

Dauvergne D.,Scheidenberger C.,L’Hoir A.,Andersen J. U.,Andriamonje S.,Böckstiegel C.,Chevallier M.,Cohen C.,Cue N.,Czajkowski S.,Forster J. S.,Geissel H.,Irnich H.,Kandler T.,Kirsch R.,Magel A.,Mokler P. H.,Münzenberg G.,Nickel F.,Pivovarov Yu. L.,Poizat J-C.,Politis M. F.,Remillieux J.,Schmaus D.,Stöhlker Th.,Suzuki T.,Toulemonde M.

Publisher

American Physical Society (APS)

Subject

Atomic and Molecular Physics, and Optics

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevA.59.2813/fulltext

Reference39 articles.

1. Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single Crystals

2. K-shell radiative electron capture with bare 60-MeV/u Kr ions channeled in a Si crystal: Experiments and simulations

3. Dielectronic recombination and energy loss for He-likeBr79ions channeled in a thin single crystal of Si

4. Radiative electron capture by oxygen ions in single-crystal channels: Experiment and theory

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