Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices-Reference-Cited by-同舟云学术

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Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices

Published:2017-11-21 Issue:5 Volume:8 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

del Valle Javier,Kalcheim Yoav,Trastoy Juan,Charnukha Aliaksei,Basov Dimitri N.,Schuller Ivan K.

Funder

Office of Naval Research

Fundación Ramón Areces

Alexander von Humboldt-Stiftung

Gordon and Betty Moore Foundation

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.8.054041/fulltext

Reference34 articles.

1. Field-induced resistive switching in metal-oxide interfaces

2. Nanoionics-based resistive switching memories

3. The missing memristor found

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

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2. Selective growth of vanadium dioxide on patterned Al/SiO₂ substrates by metal–organic chemical vapor deposition;CrystEngComm;2024

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4. Quantum imaging of the reconfigurable VO ₂ synaptic electronics for neuromorphic computing;Science Advances;2023-10-06

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