Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diode
Author:
Funder
European Union
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.014082/fulltext
Reference71 articles.
1. New Phenomenon in Narrow Germaniump−nJunctions
2. Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
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