Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor-Reference-Cited by-同舟云学术

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Published:2020-10-27 Issue:4 Volume:14 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Yang Bang^ORCID,Murooka Takuya^ORCID,Mizuno Kosuke,Kim Kwangsoo,Kato Hiromitsu,Makino Toshiharu,Ogura Masahiko,Yamasaki Satoshi,Schmidt Marek E.,Mizuta Hiroshi,Yacoby Amir^ORCID,Hatano Mutsuko,Iwasaki Takayuki^ORCID

Funder

MEXT JSPS KAKENHI

U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program

Army Research Office

MEXT Quantum Leap Flagship Program

NSF STC Center for Integrated Quantum Materials, NSF

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.044049/fulltext

Reference50 articles.

1. Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy

2. Vector electric field measurement via position-modulated Kelvin probe force microscopy

3. Electric-field-induced modulation of spin echoes of N-V centers in diamond

4. Electric-field sensing using single diamond spins

5. Nanoscale Detection of a Single Fundamental Charge in Ambient Conditions Using theNV−Center in Diamond

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