Retention Model and Express Retention Test of Ferroelectric HfO2 -Based Memory
Author:
Funder
Russian Science Foundation
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.18.064084/fulltext
Reference29 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Mechanisms of aging and fatigue in ferroelectrics
3. Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays
4. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline
5. Internal bias in ferroelectric ceramics: Origin and time dependence
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1. Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide;Nature Communications;2024-05-09
2. Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited);2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Power-Efficient Clustering Using Programmable VT FETs in Neuromorphic Architectures;2023 International Electron Devices Meeting (IEDM);2023-12-09
4. Multifrequency Retention Model of HfO2-Based FRAM;IEEE Transactions on Electron Devices;2023-12
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