Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.054015/fulltext
Reference28 articles.
1. Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy
2. Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells
3. Lateral charge carrier diffusion in InGaN quantum wells
4. Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states
5. Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
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