Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain-Reference-Cited by-同舟云学术

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Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Published:2019-03-15 Issue:3 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Yan Jian-Min,Xu Meng,Chen Ting-Wei,Yang Ming-Min,Liu Fei,Wang Hui,Guo Lei,Xu Zhi-Xue,Fan Fang-Yuan,Gao Guan-Yin,Dong Si-Ning,Li Xiao-Guang,Luo Hao-Su,Zhao Weiyao,Zheng Ren-Kui

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Chinese Academy of Sciences

State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.034037/fulltext

Reference58 articles.

1. Doping a Mott insulator: Physics of high-temperature superconductivity

2. Multiferroic and magnetoelectric materials

3. Metal-insulator transitions

4. Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr,Nd,Sm,Eu) due to closing of charge-transfer gap

5. Progress in perovskite nickelate research

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2. Straintronic effect on electronic transport and metal–insulator transition in correlated metal films by electric field;Applied Physics Letters;2022-04-18

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4. Coupled straintronic–optoelectronic effect in Mott oxide films;Nanoscale;2022

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