ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.1.024005/fulltext
Reference38 articles.
1. Doping Asymmetry Problem in ZnO: Current Status and Outlook
2. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
3. ZnO diode fabricated by excimer-laser doping
4. Synthesis of p-type ZnO films
5. High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
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