Electron-Injection-Assisted Generation of Oxygen Vacancies in MonoclinicHfO2-Reference-Cited by-同舟云学术

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Electron-Injection-Assisted Generation of Oxygen Vacancies in MonoclinicHfO2

Published:2015-12-23 Issue:6 Volume:4 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Bradley Samuel R.,Shluger Alexander L.,Bersuker Gennadi

Funder

Engineering and Physical Sciences Research Council

Office of Science and Technology

LTCP

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.4.064008/fulltext

Reference42 articles.

1. The Dielectric Breakdown in Gate Oxides under High Field Stress

2. The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

3. Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

4. Mechanism for stress‐induced leakage currents in thin silicon dioxide films

5. Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks

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5. From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks;IEEE Transactions on Device and Materials Reliability;2024-06

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