Effect of Pressure on the Energy Levels of Impurities in Semiconductors. III. Gold in Germanium
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.128.43/fulltext
Reference19 articles.
1. Effect of Pressure on the Energy Levels of Impurities in Semiconductors. I. Arsenic, Indium, and Aluminum in Silicon
2. Effect of Pressure on the Energy Levels of Impurities in Semiconductors. II. Gold in Silicon
3. Field Emission Microscopy of an Allotropic Transformation:α−βTitanium
4. Scattering of Carriers from Doubly Charged Impurity Sites in Germanium
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