Magnetic-Field-Induced Mott Transition in Semiconductors-Reference-Cited by-同舟云学术

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Magnetic-Field-Induced Mott Transition in Semiconductors

Published:1967-07-15 Issue:3 Volume:159 Page:593-599
ISSN:0031-899X
Container-title:Physical Review
language:en
Short-container-title:Phys. Rev.

Author:

Fenton E. W.,Haering R. R.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.159.593/fulltext

Reference13 articles.

1. Hydrogen atom in a strong magnetic field

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1. Excitonic Mott transition in type-II quantum dots;Physical Review B;2008-06-13

2. Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime;Journal of Physics and Chemistry of Solids;2005-11

3. Theory of double magnetophonon resonance in a two-dimensional electron gas in a tilted magnetic field;Physical Review B;2002-02-15

4. Magnetic freezeout effect in Al0.32Ga0.68As;Semiconductor Science and Technology;1993-08-01

5. Activation energy and hall-coefficient measurements in lightly dopedn-InP in the thermal freeze-out region;Il Nuovo Cimento D;1993-04

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