Hydrostatic-Pressure Dependence of the Electronic Properties of VO2Near the Semiconductor-Metal Transition Temperature
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.185.1034/fulltext
Reference24 articles.
1. Mechanisms for Metal-Nonmental Transitions in Transition-Metal Oxides and Sulfides
2. Optical Properties of VO2between 0.25 and 5 eV
3. Anisotropy of the electrical conductivity of VO2 single crystals
4. Transport Properties of Sputtered Vanadium Dioxide Thin Films
5. Growth and Electrical Properties of Vanadium-Oxide Single Crystals by Oxychrolide Decomposition Method
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