Injection Luminescence in GaAs by Direct Hole-Electron Recombination
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.137.A623/fulltext
Reference10 articles.
1. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
2. Absorption Edge in Degenerate p‐Type GaAs
3. Refractive Index of GaAs
4. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide
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