Galvanomagnetic Theory for Electrons in Germanium and Silicon: Magnetoresistance in the High-Field Saturation Limit
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.103.61/fulltext
Reference9 articles.
1. Theory of the Galvanomagnetic Effects in Germanium
2. Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy Surfaces
3. Anisotropy of cyclotron resonance in germanium
4. The Magneto-Resistance Effect in Oriented Single Crystals of Germanium
5. Transport Properties of a Many-Valley Semiconductor
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1. Influence of silicon anisotropy on the sensitivity of Hall devices and on the accuracy of magnetic angular sensors;Sensors and Actuators A: Physical;2001-08
2. Weak‐ and strong‐field magnetoresistance in (111)‐orientedn‐type PbTe epitaxial films between 1.8 and 300 K;Journal of Applied Physics;1982-04
3. Transverse Magnetoresistance in Plastically Deformed n-Type Germanium;physica status solidi (b);1970
4. Hop-Conduction Magnetoresistance inp-Type Germanium;Physical Review;1967-06-15
5. Low-Temperature Magnetoresistance ofn-Type Germanium Doped with Small and Intermediate Concentrations of Phosphorus;Physical Review;1967-06-15
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