Magnetoresistance ofn-Type Germanium in the Phonon-Assisted Hopping Conduction Range at High Magnetic Fields
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.151.595/fulltext
Reference11 articles.
1. Galvanomagnetic Effects inn-Ge in the Impurity Conduction Range
2. Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type Germanium
3. Strong-Field Magnetoresistance of Impurity Conduction inn-Type Germanium
4. Impurity Conduction at Low Concentrations
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1. The measured positive and negative magnetoresistance for n-type germanium at room temperature;Journal of Physics D: Applied Physics;2017-10-12
2. Control of exciton spin statistics through spin polarization in organic optoelectronic devices;Nature Communications;2012-01
3. Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields;Zeitschrift f�r Physik B Condensed Matter;1988-12
4. The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition;Solid-State Electronics;1985-01
5. Hopping Conduction in a Magnetic Field;Electronic Properties of Doped Semiconductors;1984
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