Effect of Deep Levels on the Optical and Electrical Properties of Copper-Doped GaAsp−nJunctions
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.138.A1551/fulltext
Reference26 articles.
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4. Evidence for the Existence of High Concentrations of Lattice Defects in GaAs
5. Properties ofp‐Type GaAs Prepared by Copper Diffusion
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5. Cathodoluminescence of copper-doped GaAs and its relation to EL2 centres;physica status solidi (b);1992-12-01
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