Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC : Reconciling Theory and Experiments
Author:
Funder
EU’s H2020
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.12.021002/fulltext
Reference56 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
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4. Polytypic transformations in silicon carbide
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