Electronic Transport Properties and Nanodevice Designs for Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi>Si</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math>-Reference-Cited by-同舟云学术

Electronic Transport Properties and Nanodevice Designs for Monolayer MoSi2P4

Author:

Gao Yifan,Liao Jiabao,Wang Heyan,Wu Yi,Li Yilian,Wang Kun^ORCID,Ma Chunlan^ORCID,Gong Shijing,Wang Tianxing,Dong Xiao,Jiao Zhaoyong,An Yipeng^ORCID

Funder

National Natural Science Foundation of China

Henan Normal University

Science Foundation for the Excellent Youth Scholars of Henan Province

Scientific and Technological Innovation Program of Henan Province's Universities

Key Scientific Project of Universities of Henan Province

Young Top-notch Talents Project of Henan Province

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

Reference71 articles.

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