Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Author:

Spence Cameron,Cardoso Paz BrunaORCID,Michal Vincent,Chanrion Emmanuel,Niegemann David J.,Jadot BaptisteORCID,Mortemousque Pierre-AndréORCID,Klemt Bernhard,Thiney Vivien,Bertrand BenoitORCID,Hutin Louis,Bäuerle ChristopherORCID,Vinet Maud,Niquet Yann-Michel,Meunier Tristan,Urdampilleta Matias

Funder

Agence Nationale de la Recherche

GreQuE doctoral programs

Mosquito project

QuCube

QLSI

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Decoherence induced by a sparse bath of two-level fluctuators: Peculiar features of 1/f noise in high-quality qubits;Physical Review Research;2024-08-15

2. Low charge noise quantum dots with industrial CMOS manufacturing;npj Quantum Information;2024-07-19

3. Quantum Processors in Silicon;Synthesis Lectures on Engineering, Science, and Technology;2024-07-14

4. Electrical operation of hole spin qubits in planar MOS silicon quantum dots;Physical Review B;2024-02-22

5. Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices;2023 International Electron Devices Meeting (IEDM);2023-12-09

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