Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field
Author:
Funder
NSF
FEDER
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.034058/fulltext
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1. Emission of spin waves by a magnetic multilayer traversed by a current
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4. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)
5. Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction
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1. Investigation of magnetization reversal and domain structures in perpendicular synthetic antiferromagnets by first-order reversal curves and magneto-optical Kerr effect;Chinese Physics B;2023-10-01
2. Optical Monitoring of the Magnetization Switching of Single Synthetic-Antiferromagnetic Nanoplatelets with Perpendicular Magnetic Anisotropy;ACS Photonics;2023-04-28
3. Switching current reduction in magnetoresistive random access memories;Journal of Magnetism and Magnetic Materials;2023-02
4. Current-driven magnetization dynamics and its correlation with magnetization configurations in perpendicularly magnetized tunnel junctions;Journal of Applied Physics;2022-11-07
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