Temperature-Dependent Trap-Assisted Ultrafast Carrier Dynamics in Amorphous and Crystalline In2Se3 Thin Films
Author:
Funder
DST
Institute of Nano Science and Technology
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.014087/fulltext
Reference43 articles.
1. Van der Waals thin-film electronics
2. Two‐Dimensional GeP‐Based Broad‐Band Optical Switches and Photodetectors
3. The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
4. A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction
5. Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures
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