Quasi-Fermi-Level Splitting of Cu -Poor and Cu -Rich CuInS2 Absorber Layers-Reference-Cited by-同舟云学术

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Quasi-Fermi-Level Splitting of Cu -Poor and Cu -Rich CuInS2 Absorber Layers

Published:2019-05-20 Issue:5 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Lomuscio Alberto,Rödel Tobias,Schwarz Torsten,Gault Baptiste,Melchiorre Michele,Raabe Dierk,Siebentritt Susanne

Funder

Fonds National de la Recherche

German Research Foundation

Max-Planck Institut für Eisenforschung GmbH

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.054052/fulltext

Reference27 articles.

1. Electrical Properties, Optical Properties, and Band Structure of CuGaS2and CuInS2

2. What limits the efficiency of chalcopyrite solar cells?

3. What Makes a Good Solar Cell?

4. High voltage, please!

5. Improved performance of thin film solar cells based on Cu(In,Ga)S2

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1. Composition dependence of electronic defects in CuGaS₂;Progress in Photovoltaics: Research and Applications;2024-02-20

2. Establishment of Justified Parameter Optimization Sequence for obtaining Maximum Solar Cell Efficiency;Physica Scripta;2023-09-28

3. Role of nanoscale compositional inhomogeneities in limiting the open circuit voltage in Cu(In,Ga)S2 solar cells;APL Energy;2023-09-01

4. Defect-Complex Engineering to Improve the Optoelectronic Properties of CuInS2 by Phosphorus Incorporation;Physical Review Applied;2023-06-12

5. Mechanism analysis of CuInS₂ and Cu(In,Ga)S₂ growth via KCN- and H₂S-free process and solar-cell application;Japanese Journal of Applied Physics;2023-05-05

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