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In-Plane Ferroelectric Tunnel Junction

Published:2019-02-20 Issue:2 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Shen Huitao,Liu Junwei,Chang Kai,Fu Liang

Funder

Deutsche Forschungsgemeinschaft

David and Lucile Packard Foundation

DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering

Hong Kong Research Grants Council

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.024048/fulltext

Reference49 articles.

1. Multiferroic memories

2. Ferroelectric Memories

3. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-correlation transport and multiple resistive states in multiferroic tunnel junctions;Physical Review B;2024-07-25

2. Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials;ACS Applied Materials & Interfaces;2024-06-21

3. Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films;ACS Applied Materials & Interfaces;2024-06-12

4. Intrinsic high-temperature ferroelectricity, superferroelasticity, and deep-ultraviolet nonlinear optical response of GaOCl monolayer;Physical Review Materials;2024-05-21

5. Enhanced tunneling electroresistance through polarization-controlled band alignments in α-In2Se3-based ferroelectric tunnel junctions;Current Applied Physics;2024-03

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