Disorder-Induced Degradation of Vertical Carrier Transport in Strain-Balanced Antimony-Based Superlattices
Author:
Funder
U.S. Army Research Laboratory
Army Research Office
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.16.054028/fulltext
Reference22 articles.
1. Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
2. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
3. Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density
4. Analysis of III–V Superlattice nBn Device Characteristics
5. Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors
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