Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2-Reference-Cited by-同舟云学术

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Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

Published:2020-05-22 Issue:5 Volume:13 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Davari S.,Stacy J.,Mercado A.M.,Tull J.D.,Basnet R.,Pandey K.^ORCID,Watanabe K.^ORCID,Taniguchi T.,Hu J.,Churchill H.O.H.^ORCID

Funder

Air Force Office of Scientific Research

U.S. Department of Energy, Office of Science, Basic Energy Sciences program

Core Research for Evolutional Science and Technology

MEXT Element Strategy Initiative To Form Core Research Centers

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.054058/fulltext

Reference65 articles.

1. A valley–spin qubit in a carbon nanotube

2. Landau-Zener interferometry of valley-orbit states in Si/SiGe double quantum dots

3. Two-axis quantum control of a fast valley qubit in silicon

4. Spin and pseudospins in layered transition metal dichalcogenides

5. Direct measurement of exciton valley coherence in monolayer WSe2

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts;Journal of the Physical Society of Japan;2024-09-15

2. Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots;ACS Applied Materials & Interfaces;2024-06-06

3. First-Principles Study of Electronic Band Structures in Three Magnetic Orders and Optical Properties of YOX (F, Cl, Br) Two-Dimensional System Employing Density Functional Theory;2024

4. Interacting holes in gated WSe2 quantum dots;Physical Review B;2023-11-06

5. Tunable p–n junction barriers in few-electron bilayer graphene quantum dots;Applied Physics Letters;2023-10-30

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