Redefining the Mobility Edge in Thin-Film Transistors
Author:
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.064039/fulltext
Reference64 articles.
1. Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors
2. The Transient Localization Scenario for Charge Transport in Crystalline Organic Materials
3. Electrical transport limited by electron-phonon coupling from Boltzmann transport equation: Anab initiostudy of Si, Al, andMoS2
4. Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs
5. Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors
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