Origins of stress on elemental and chemisorbed semiconductor surfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.1404/fulltext
Reference19 articles.
1. 7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain
2. Absence of large compressive stress on Si(111)
3. Si(100) Surface under an Externally Applied Stress
4. Spontaneous Formation of Stress Domains on Crystal Surfaces
5. Arsenic-terminated silicon and germanium surfaces studied by scanning tunnelling microscopy
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1. Deformation of the Interatomic Bonds in the Upper Layers of the Ge(111) Surface with c(2 × 8), 7 × 7, and 5 × 5 Structures;Journal of Experimental and Theoretical Physics;2021-07
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4. Intermediate Structures in the Lifting of a Stacking Fault on the Si(111)–(7 × 7) Surface Studied by Monte Carlo Simulations;Journal of the Physical Society of Japan;2018-03-15
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