Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton Complexes-Reference-Cited by-同舟云学术

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Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton Complexes

Published:1976-01-05 Issue:1 Volume:36 Page:48-51
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Sauer R.,Weber J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.36.48/fulltext

Reference11 articles.

1. Evidence for Bound Multiple-Exciton Complexes in Silicon

2. New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si

3. Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon

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1. Theory of Umklapp-assisted recombination of bound excitons in Si:P;Journal of Physics: Condensed Matter;2009-01-30

2. MODELING AND IMPLEMENTATION OF SPIN-BASED QUANTUM COMPUTATION;International Journal of High Speed Electronics and Systems;2007-09

3. Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon in magnetic fields;Physical Review B;1993-04-15

4. Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress;Physical Review B;1992-05-15

5. Electron—Hole Liquids in Semiconductors;Basic Properties of Semiconductors;1992

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