Mechanism of the Band Gap Opening across the Order-Disorder Transition ofSi(111)(4×1)−In
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.102.115501/fulltext
Reference27 articles.
1. Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy
2. Surface reconstructions of In on Si(111)
3. Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study
4. Metallicity of In chains on Si(111)
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