Ultrafast Carrier Relaxation in Si Studied by Time-Resolved Two-Photon Photoemission Spectroscopy: Intravalley Scattering and Energy Relaxation of Hot Electrons-Reference-Cited by-同舟云学术

Ultrafast Carrier Relaxation in Si Studied by Time-Resolved Two-Photon Photoemission Spectroscopy: Intravalley Scattering and Energy Relaxation of Hot Electrons

Published:2009-02-26 Issue:8 Volume:102 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ichibayashi T.,Tanimura K.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.102.087403/fulltext

Reference19 articles.

1. Non-thermal melting in semiconductors measured at femtosecond resolution

2. Carrier-Density-Dependent Lattice Stability in InSb

3. Electronically Driven Structure Changes of Si Captured by Femtosecond Electron Diffraction

4. Ultrafast Carrier Dynamics in Silicon: A Two-Color Transient Reflection Grating Study on a(111)Surface

5. Ultrafast transient grating scattering studies of carrier dynamics at a silicon surface

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