Electroreflectance of GaP to 27 eV
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.33.1605/fulltext
Reference26 articles.
1. Electroreflectance at a Semiconductor-Electrolyte Interface
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3. Core Transitions and Density of Conduction States in the III-V Semiconductors
4. Core Levels of III-V Semiconductors
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1. Photoreflectance study in the E0 and E0+Δ0 transition regions of GaP;Journal of Applied Physics;2002-04-15
2. Comparison between the electronic dielectric functions of a GaAs/AlAs superlattice and its bulk components by spectroscopic ellipsometry using core levels;Physical Review B;1995-07-15
3. Temperature dependence of the dielectric function and the interband critical-point parameters of GaP;Thin Solid Films;1993-10
4. Temperature dependence of the dielectric function and the interband critical-point parameters of GaP;Physical Review B;1993-09-15
5. Fine structure and temperature dependence of shallow core excitons in insulators and semiconductors;Applied Optics;1980-12-01
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