Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) Interfaces-Reference-Cited by-同舟云学术

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Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) Interfaces

Published:1984-04-02 Issue:14 Volume:52 Page:1246-1249
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Chiaradia P.,Katnani A. D.,Sang H. W.,Bauer R. S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.52.1246/fulltext

Reference23 articles.

1. Microscopic investigations of semiconductor interfaces

2. Empirical rule to predict heterojunction band discontinuities

3. Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers

4. Chemisorption-Induced Defects on GaAs(110) Surfaces

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