Pressure Dependence of Band Offsets in an InAs-GaSb Superlattice
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.57.2556/fulltext
Reference20 articles.
1. Heterostructure devices: A device physicist looks at interfaces
2. Barrier control and measurements: Abrupt semiconductor heterojunctions
3. Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
4. Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices
5. Three-dimensional character of semimetallic InAs-GaSb superlattices
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1. Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties;Physical Review B;2017-03-16
2. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires;Scientific Reports;2016-12
3. Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices;Applied Physics A;2016-03-09
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