Ultrafast Coherent Generation of Hot Electrons Studied via Band-to-Acceptor Luminescence in GaAs-Reference-Cited by-同舟云学术

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Ultrafast Coherent Generation of Hot Electrons Studied via Band-to-Acceptor Luminescence in GaAs

Published:1994-09-19 Issue:12 Volume:73 Page:1687-1690
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Leitenstorfer Alfred,Lohner Andrea,Elsaesser Thomas,Haas Stefan,Rossi Fausto,Kuhn Tilmann,Klein W.,Boehm G.,Traenkle G.,Weimann G.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.1687/fulltext

Reference21 articles.

1. Photoexcited hot carriers: From cw to 6 fs in 20 years

2. Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs

3. Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy

4. Hot electron photoluminescence in GaAs crystals

5. Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering

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