Photoluminescence transitions of the deepEL2 defect in gallium arsenide
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.2282/fulltext
Reference21 articles.
1. High Performance Photoluminescence Spectroscopy using Fourier Transform Interferometry
2. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
3. Identification of a defect in a semiconductor:EL2 in GaAs
4. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
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1. Radiation Damage in GaAs;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
2. Bound excitons in GaN;Journal of Physics: Condensed Matter;2001-07-26
3. The energy level of the EL2 defect in GaAs;Solid-State Electronics;1999-01
4. Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs;Semiconductors and Semimetals;1998
5. EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs;Materials Science Forum;1997-12
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