Temperature Dependence of Silicon Luminescence Due to Splitting of the Indirect Ground State
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.35.1535/fulltext
Reference13 articles.
1. Fine Structure in the Absorption-Edge Spectrum of Si
2. Analysis of intrinsic recombination radiation from silicon and germanium
3. Valley-Orbit Splitting of the Indirect Free Exciton in Silicon
4. Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si
5. Analysis of derivative spectrum of indirect exciton absorption in silicon
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