Mott Quantum Critical Points at Finite Doping-Reference-Cited by-同舟云学术

Mott Quantum Critical Points at Finite Doping

Published:2023-02-07 Issue:6 Volume:130 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Chatzieleftheriou Maria^ORCID,Kowalski Alexander^ORCID,Berović Maja,Amaricci Adriano^ORCID,Capone Massimo^ORCID,De Leo Lorenzo,Sangiovanni Giorgio^ORCID,de’ Medici Luca^ORCID

Funder

European Commission

Deutsche Forschungsgemeinschaft

Ministero dell’Istruzione, dell’Università e della Ricerca

Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.130.066401/fulltext

Reference52 articles.

1. Metal-insulator transitions

2. New Model Hamiltonian for the Metal-Insulator Transition

3. Phase Separation in Doped Mott Insulators

4. Phase separation in thet-Jmodel

5. Superconductivity, phase separation, and charge-transfer instability in theU=∞ limit of the three-band model of theCuO2planes

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