General Theory for Bilayer Stacking Ferroelectricity-Reference-Cited by-同舟云学术

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General Theory for Bilayer Stacking Ferroelectricity

Published:2023-04-04 Issue:14 Volume:130 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ji Junyi,Yu Guoliang,Xu Changsong^ORCID,Xiang H. J.^ORCID

Funder

Ministry of Science and Technology of the People’s Republic of China

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.130.146801/fulltext

Reference47 articles.

1. Functional electronic inversion layers at ferroelectric domain walls

2. Ferroelectric tunnel junctions for information storage and processing

3. Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

4. Spontaneous-polarization-induced photovoltaic effect in rhombohedrally stacked MoS2

5. Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors

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3. Sliding ferromagnetism in bilayer MnSiSe3 and its application to spintronics;Physical Review B;2024-09-03

4. Altermagnetism Induced by Sliding Ferroelectricity via Lattice Symmetry-Mediated Magnetoelectric Coupling;Nano Letters;2024-08-30

5. Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications;2024-08-05

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