Pressure Dependence of the TA[100] Zone-Boundary Phonon Frequency in Rubidium Iodide-Reference-Cited by-同舟云学术

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Pressure Dependence of the TA[100] Zone-Boundary Phonon Frequency in Rubidium Iodide

Published:1966-09-05 Issue:10 Volume:17 Page:530-533
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Saunderson D. H.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.17.530/fulltext

Reference7 articles.

1. Born model treatment of the polymorphic transitions of the alkali halides

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1. Structural, electronic, and elastic properties of RbI using the FP-LAPW method;Modern Physics Letters B;2023-07-06

2. Phonons, Strains, and Pressure in Semiconductors;High Pressure in Semiconductor Physics II;1998

3. Phonon measurement of RbCl at 4.9 kbar;Physica B: Condensed Matter;1997-12

4. Pressure-dependent phonon properties of III-V compound semiconductors;Physical Review B;1990-06-15

5. High-pressure elasticity, shear-mode softening and polymorphism in MnO;Physics of the Earth and Planetary Interiors;1988-10

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