Temperature-Dependent Localized Excitations of Doped Carriers in Superconducting Diamond-Reference-Cited by-同舟云学术

Temperature-Dependent Localized Excitations of Doped Carriers in Superconducting Diamond

Published:2008-04-25 Issue:16 Volume:100 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ishizaka K.,Eguchi R.,Tsuda S.,Chainani A.,Yokoya T.,Kiss T.,Shimojima T.,Togashi T.,Watanabe S.,Chen C.-T.,Takano Y.,Nagao M.,Sakaguchi I.,Takenouchi T.,Kawarada H.,Shin S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.100.166402/fulltext

Reference32 articles.

1. Superconductivity in diamond

2. Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films

3. Superconducting and normal-state properties of heavily hole-doped diamond

4. Tunneling Spectroscopy and Vortex Imaging in Boron-Doped Diamond

5. Low-Energy Electrodynamics of Superconducting Diamond

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