Direct Evidence for a Reduced Density of Deep Level Defects at Grain Boundaries ofCu(In,Ga)Se2Thin Films-Reference-Cited by-同舟云学术

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Direct Evidence for a Reduced Density of Deep Level Defects at Grain Boundaries ofCu(In,Ga)Se2Thin Films

Published:2010-09-08 Issue:11 Volume:105 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Mönig H.,Smith Y.,Caballero R.,Kaufmann C. A.,Lauermann I.,Lux-Steiner M. Ch.,Sadewasser S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.105.116802/fulltext

Reference19 articles.

1. Defect physics of theCuInSe2chalcopyrite semiconductor

2. Electrically Benign Behavior of Grain Boundaries in PolycrystallineCuInSe2Films

3. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier

4. Effects of Na on the electrical and structural properties of CuInSe2

5. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

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3. Grain Boundaries in Cu(In, Ga)Se 2 : A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy;Advanced Functional Materials;2021-07-16

4. Large photocurrent density in polycrystalline hexagonal YMnO3 thin film induced by ferroelectric polarization and the positive driving effect of grain boundary;Solar Energy Materials and Solar Cells;2021-06

5. Electronic and compositional properties of the rear‐side of stoichiometric CuInSe 2 absorbers;Progress in Photovoltaics: Research and Applications;2020-12-07

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